BF1208,115 NXP Semiconductors, BF1208,115 Datasheet

MOSFET N-CH DUAL GATE SSMINI-6

BF1208,115

Manufacturer Part Number
BF1208,115
Description
MOSFET N-CH DUAL GATE SSMINI-6
Manufacturer
NXP Semiconductors
Datasheet
1.BF1208115.pdf (22 pages)

Specifications of BF1208,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
32dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
19mA
Voltage - Test
5V
Configuration
Dual Common Source
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058529115
BF1208 T/R
BF1208 T/R
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
digital and analog television tuners
professional communication equipment
Product data sheet

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BF1208,115 Summary of contents

Page 1

BF1208 Dual N-channel dual gate MOSFET Rev. 01 — 16 March 2005 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...

Page 2

Philips Semiconductors 1.4 Quick reference data Table 1: Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod Pinning information Table 2: Pin ...

Page 3

Philips Semiconductors 3. Ordering information Table 3: Type number BF1208 4. Marking Table 4: Type number BF1208 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET ...

Page 4

Philips Semiconductors 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7. Static characteristics Table 7: Static characteristics unless otherwise specified. j Symbol Parameter Per MOSFET; unless ...

Page 5

Philips Semiconductors (mA (4) 4 ( 120 k . D( 150 k . D( ...

Page 6

Philips Semiconductors Table 8: Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter Xmod cross-modulation [1] For the MOSFET not in use: V G1-S(B) [2] Measured in Figure 33 test circuit. 8.1.1 Graphics ...

Page 7

Philips Semiconductors (mS ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...

Page 8

Philips Semiconductors (mA DS(A) DS(B) supply G2 150 k (connected to ground); see G1 Fig 8. Amplifier A: drain current ...

Page 9

Philips Semiconductors (mA DS(A) DS(B) G1-S( see Figure 33. amb Fig 12. Amplifier A: drain current as a function of ...

Page 10

Philips Semiconductors Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 50 100 200 300 400 500 600 700 800 ...

Page 11

Philips Semiconductors 8.2 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at ...

Page 12

Philips Semiconductors 8.2.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. ...

Page 13

Philips Semiconductors 100 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...

Page 14

Philips Semiconductors ( 100 ( 120 (5) ...

Page 15

Philips Semiconductors ( 3.0 ...

Page 16

Philips Semiconductors (mS DS(B) G2 D(B) Fig 29. Amplifier ...

Page 17

Philips Semiconductors 8.2.2 Scattering parameters for amplifier B Table 12 DS(B) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 8.2.3 Noise data for amplifier B Table 13 ...

Page 18

Philips Semiconductors 9. Test information Fig 33. Cross-modulation test set-up for amplifier A Fig 34. Cross-modulation test set-up for amplifier B 9397 750 14254 Product data sheet V AGC 10 k 4.7 nF G1A R GEN 4 ...

Page 19

Philips Semiconductors 10. Package outline Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 ...

Page 20

Philips Semiconductors 11. Revision history Table 14: Revision history Document ID Release date BF1208_1 20050316 9397 750 14254 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 16 March 2005 BF1208 Dual N-channel dual ...

Page 21

Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 22

Philips Semiconductors 16. Contents 1 Product profi 1.1 General description ...

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