BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 4

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
6. Thermal characteristics
Table 6:
7. Static characteristics
Table 7:
T
[1]
[2]
9397 750 14254
Product data sheet
Symbol
R
Symbol
Per MOSFET; unless otherwise specified
V
V
V
V
V
V
V
I
I
I
DSX
G1-S
G2-S
j
(BR)DSS
(BR)G1-SS
(BR)G2-SS
F(S-G1)
F(S-G2)
G1-S(th)
G2-S(th)
th(j-sp)
= 25 C; unless otherwise specified.
R
R
G1
G1
connects gate1 (B) to V
connects gate1 (B) to V
Thermal characteristics
Static characteristics
Parameter
thermal resistance from junction to solder point
Parameter
drain-source breakdown voltage
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
gate1 cut-off current
gate2 cut-off current
GG
GG
= 0 V (see
= 5 V (see
Figure
Figure
3).
3).
Rev. 01 — 16 March 2005
Conditions
V
V
V
V
V
V
V
V
V
V
V
G1-S
G2-S
G1-S
G2-S
G1-S
DS
DS
G2-S
G2-S
G2-S
G1-S(A)
amplifier A
amplifier B
amplifier A; V
amplifier B; V
amplifier A; V
amplifier B; V
= 5 V; V
= 5 V; V
= V
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= V
G2-S
DS
DS
DS
DS
DS(A)
DS(A)
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
G2-S
G1-S
= 0 V; I
DS(B)
G1-S(B)
= 0 V
DS(A)
DS(B)
G1-S(A)
G1-S(B)
= 4 V; I
= 5 V; I
= V
= 5 V; R
G1-S
G2-S
S-G1
S-G2
DS(B)
= 5 V
= 5 V
= 0 V;
D
= 5 V; I
= 5 V; V
= 10 A
Conditions
= 10 mA
= 10 mA
= 10 mA
= 10 mA
D
D
= 0 V
= 100 A
= 100 A
G1
D(B)
= 150 k
DS(B)
Dual N-channel dual gate MOSFET
= 0 A
= 0 V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[2]
Typ
225
Min
6
6
6
6
0.5
0.5
0.3
0.4
14
9
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
BF1208
Unit
K/W
Max Unit
-
-
10
10
1.5
1.5
1.0
1.0
24
17
50
50
20
4 of 22
V
V
V
V
V
V
V
V
mA
mA
nA
nA
nA