BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 15

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
9397 750 14254
Product data sheet
Fig 25. Amplifier B: gate1 current as a function of
Fig 27. Amplifier B: gain reduction as a function of
reduction
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
gain
(dB)
I
G1
30
20
10
10
20
30
40
50
0
0
V
R
gate2 voltage; typical values
V
R
T
AGC voltage; typical values
0
0
amb
GG
GG
GG
GG
GG
DS(B)
DS(B)
G1
G1
= 150 k (connected to V
= 150 k (connected to V
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 25 C; see
= 5 V; V
= 5 V; V
1
DS(A)
GG
2
= 5 V; V
Figure
= V
G1-S(A)
2
34.
DS(A)
= 0 V; T
GG
GG
4
= V
); see
); f = 50 MHz;
G1-S(A)
3
V
G2-S
V
j
001aaa576
001aac199
AGC
Figure
= 25 C;
(1)
(2)
(3)
(4)
(5)
(V)
= 0 V;
(V)
Rev. 01 — 16 March 2005
3.
6
4
Fig 26. Amplifier B: unwanted voltage for 1 %
Fig 28. Amplifier B: drain current as a function of gain
(dB V)
V
(mA)
unw
I
D
120
110
100
90
80
16
12
8
4
0
V
R
f
cross-modulation as a function of gain
reduction; typical values
V
R
T
reduction; typical values
unw
0
0
amb
DS(B)
G1
DS(B)
G1
= 60 MHz; T
= 150 k (connected to V
= 150 k (connected to V
= 25 C; see
= 5 V; V
= 5 V; V
10
Dual N-channel dual gate MOSFET
GG
GG
20
amb
= 5 V; V
= 5 V; V
Figure
20
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
= 25 C; see
34.
DS(A)
DS(A)
30
GG
GG
40
gain reduction (dB)
= V
= V
); f
); f = 50 MHz;
Figure
gain reduction (dB)
G1-S(A)
G1-S(A)
w
40
= 50 MHz;
001aac198
001aac200
BF1208
34.
= 0 V;
= 0 V;
60
50
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