BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 5
![MOSFET N-CH DUAL GATE SSMINI-6](/photos/5/30/53033/sot666_sml.jpg)
BF1208,115
Manufacturer Part Number
BF1208,115
Description
MOSFET N-CH DUAL GATE SSMINI-6
Manufacturer
NXP Semiconductors
Datasheet
1.BF1208115.pdf
(22 pages)
Specifications of BF1208,115
Package / Case
SS Mini-6 (SOT-666)
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
32dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
19mA
Voltage - Test
5V
Configuration
Dual Common Source
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058529115
BF1208 T/R
BF1208 T/R
BF1208 T/R
BF1208 T/R
Philips Semiconductors
8. Dynamic characteristics
Table 8:
Common source; T
9397 750 14254
Product data sheet
Symbol
C
C
C
C
G
NF
y
Fig 2. Drain currents of MOSFET A and B as a
fs
iss(G1)
iss(G2)
oss
rss
tr
(mA)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
I
D
20
16
12
8
4
0
function of gate1 supply voltage
D(B)
D(B)
D(B)
D(A)
D(A)
D(A)
0
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
power gain
noise figure
Dynamic characteristics for amplifier A
; R
; R
; R
; R
; R
; R
G1
G1
G1
G1
G1
G1
(6)
= 120 k .
= 150 k .
= 180 k .
= 180 k .
= 150 k .
= 120 k .
8.1 Dynamic characteristics for amplifier A
1
amb
(4)
= 25 C; V
(5)
2
G2-S
3
= 4 V; V
Conditions
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
4
001aaa552
j
S
(2)
V
(1)
(3)
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
= 25 C
GG
= B
DS
(V)
= 5 V; I
S(opt)
Rev. 01 — 16 March 2005
5
; B
[1]
D
L
S
S
S
= 19 mA; unless otherwise specified.
= B
= 20 mS; B
= Y
= Y
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
Fig 3. Functional diagram
S
= 0 S
V
V
L
L
GG
GG
= 0.5 mS
= 1 mS
L
= 1 mS
= 5 V: amplifier A is off; amplifier B is on.
= 0 V: amplifier A is on; amplifier B is off.
G1A
G1B
G2
R
G1
Dual N-channel dual gate MOSFET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
V
GG
Min
26
-
-
-
-
32
28
23
-
-
-
001aac205
Typ
31
2.2
3.0
0.9
20
36
32
27
3.0
1.3
1.4
DA
S
DB
BF1208
Max Unit
41
2.7
-
-
-
40
36
32
-
1.9
2.1
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
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