BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 14

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
9397 750 14254
Product data sheet
Fig 23. Amplifier B: drain current as a function of gate1
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
(8) R
I
D
24
16
8
0
V
R
supply voltage and drain supply voltage; typical
values
0
G2-S
G1
G1
G1
G1
G1
G1
G1
G1
G1
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
= 180 k .
= 220 k .
= 270 k .
is connected to V
= 4 V; V
DS(A)
2
= V
GG
G1-S(A)
; see
= 0 V; T
Figure
4
V
GG
3.
j
001aaa574
= 25 C;
V
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
DS
(V)
Rev. 01 — 16 March 2005
6
Fig 24. Amplifier B: drain current as a function of gate2
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
I
D
16
12
8
4
0
V
R
voltage; typical values
0
GG
GG
GG
GG
GG
DS(B)
G1
= 150 k (connected to V
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 5 V; V
Dual N-channel dual gate MOSFET
DS(A)
2
= V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
G1-S(A)
GG
= 0 V; T
4
); see
V
G2-S
j
001aaa575
BF1208
= 25 C;
Figure
(1)
(2)
(3)
(4)
(5)
(V)
3.
6
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