BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 12
![MOSFET N-CH DUAL GATE SSMINI-6](/photos/5/30/53033/sot666_sml.jpg)
BF1208,115
Manufacturer Part Number
BF1208,115
Description
MOSFET N-CH DUAL GATE SSMINI-6
Manufacturer
NXP Semiconductors
Datasheet
1.BF1208115.pdf
(22 pages)
Specifications of BF1208,115
Package / Case
SS Mini-6 (SOT-666)
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
32dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
19mA
Voltage - Test
5V
Configuration
Dual Common Source
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058529115
BF1208 T/R
BF1208 T/R
BF1208 T/R
BF1208 T/R
Philips Semiconductors
9397 750 14254
Product data sheet
Fig 17. Amplifier B: transfer characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
30
20
10
0
V
values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
8.2.1 Graphics for amplifier B
0.4
DS(A)
0.8
= V
G1-S(A)
1.2
(3)
= 0 V; T
(2)
1.6
(1)
V
j
001aaa568
= 25 C.
G1-S
(4)
(5)
(6)
(7)
(V)
Rev. 01 — 16 March 2005
2
Fig 18. Amplifier B: output characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
32
24
16
8
0
V
values
0
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G2-S
= 4 V; V
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1 V.
Dual N-channel dual gate MOSFET
DS(A)
2
= V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
G1-S(A)
= 0 V; T
4
V
DS
j
001aaa569
= 25 C.
BF1208
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
6
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