BF1208D NXP Semiconductors, BF1208D Datasheet
BF1208D
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BF1208D Summary of contents
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... Rev. 01 — 16 May 2007 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC) ...
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... Y S S(opt) amplifi 400 MHz - amplifi 800 MHz - = 50 MHz MHz unw [3] amplifier A 102 [4] amplifier B 102 - Simplified outline Symbol G1A G1B BF1208D Max Unit - 180 2.1 2.6 pF 2.1 2 0.9 1 ...
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... P tot (mW) 200 150 100 Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET Marking code 4A Conditions Min Max [1] T 109 C ...
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... V DS(A) amplifi G2-S DS(A) amplifi G1-S(A) amplifi G1-S( G2-S G1-S( G1-S(A) DS(A) DS(B) Figure 3). Figure 3). Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET Typ 225 Min Typ 0 100 A 0 100 [2] ...
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... MHz mS 400 MHz S(opt 800 MHz S(opt) Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET G1A G2 G1B 001aac205 amplifi off; amplifi on amplifi on; amplifi off. ...
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... 1.8 V. G1-S(A) = 1.7 V. G1-S(A) = 1.6 V. G1-S(A) = 1.5 V. G1-S(A) = 1.4 V. G1-S(A) = 1.3 V. G1-S(A) = 1.2 V. G1-S(A) = 1.1 V. G1-S( G1-S( G2-S G1-S(B) DS(B) values BF1208D Typ Max Unit - - 105 - dB V 001aaa555 (1) (2) (3) (4) (5) (6) (7) ( © NXP B.V. 2007. All rights reserved ...
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... Product data sheet 001aaa556 20 I D(A) (mA) (1) 16 (2) 12 (3) ( (mA Fig 7. Amplifier A: drain current as a function of Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET D( DS(A) G2-S DS( G1-S(B) j ...
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... V; gate1 (AMP A) is open; DS(A) G1-S( voltage; typical values MHz; DS(A) DS(B) G1-S(B) see Figure 33. AGC voltage; typical values BF1208D 001aaa559 (1) (2) (3) (4) (5) ( (V) G2-S 001aac196 (V) AGC © NXP B.V. 2007. All rights reserved ...
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... D(A) frequency; typical values (MHz DS(A) G2-S DS( D(A) phase as a function of frequency; typical values BF1208D 001aag357 G1-S(B) 001aag359 (deg G1-S(B) © NXP B.V. 2007. All rights reserved ...
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... Noise data for amplifi mA; V G2-S D(A) DS(B) NF (dB) min opt (ratio) 0.9 0.77 1.1 0.73 Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET 001aag360 (MHz D( typical values. G1-S(B) amb ...
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... DS(A) Rev. 01 — 16 May 2007 Dual N-channel dual gate MOSFET Min Typ 25 [2] - [2] - [ MHz unw 102 BF1208D Max Unit 2.1 2 1.1 1.7 dB 1.4 2 ...
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... Fig 18. Amplifier B: output characteristics; typical Rev. 01 — 16 May 2007 Dual N-channel dual gate MOSFET 1.6 V. G1-S(B) = 1.5 V. G1-S(B) = 1.4 V. G1-S(B) = 1.3 V. G1-S(B) = 1.2 V. G1-S(B) = 1.1 V. G1-S( G1-S( G2-S DS(A) G1-S(A) values BF1208D 001aag362 (1) (2) (3) (4) (5) ( © NXP B.V. 2007. All rights reserved ...
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... DS(B) G2-S DS( (connected Figure 3. supply voltage; typical values BF1208D 001aag364 (1) (2) ( (mA 001aag366 ( G1-S(A) ); see GG © NXP B.V. 2007. All rights reserved ...
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... Dual N-channel dual gate MOSFET DS(B) DS(A) G1-S( (connected see G1 GG voltage; typical values BF1208D 001aag368 (1) (2) (3) (4) ( (V) G2 Figure 3. © NXP B.V. 2007. All rights reserved ...
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... Fig 26. Amplifier B: unwanted voltage 001aag371 I D (mA (V) AGC = G1-S( MHz; GG Fig 28. Amplifier B: drain current as a function of gain Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET 120 110 100 gain reduction (dB DS(B) GG ...
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... D(B) phase as a function of frequency; typical values (MHz DS(B) G2-S DS( D(B) frequency; typical values BF1208D 001aag374 (deg G1-S(A) 001aag376 G1-S(A) © NXP B.V. 2007. All rights reserved ...
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... Noise data for amplifi mA; V G2-S D(B) DS(A) NF (dB) min opt (ratio) 1.1 0.72 1.4 0.68 Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET = typical values. G1-S(A) amb Angle Magnitude Angle Magnitude (deg) (ratio) (deg) (ratio) 176 ...
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... G2 50 BF1208D 4 G1B AGC 10 k 4.7 nF G1A 4 BF1208D 4.7 nF G1B R GEN Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET V DS( 2 2 DS(B) 5V 001aag398 V DS( ...
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... scale 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET detail 0.1 0.1 EUROPEAN PROJECTION © NXP B.V. 2007. All rights reserved. SOT666 ISSUE DATE 04-11-08 06-03- ...
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... Automatic Gain Control Direct Current Metal-Oxide Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 16 May 2007 BF1208D Dual N-channel dual gate MOSFET © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1208D All rights reserved. Date of release: 16 May 2007 Document identifier: BF1208D_1 ...