BF1208D NXP Semiconductors, BF1208D Datasheet - Page 7

• Manufacturer Part Number: BF1208D
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208D_1
Product data sheet
Fig 6. Amplifier A: forward transfer admittance as a
(mS)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
y
fs
40
30
20
10
0
V
function of drain current; typical values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 5 V; V
8
(6)
G1-S(B)
= V
16
(5)
DS(B)
= 0 V; T
(4)
24
I
j
001aaa556
D
(1)
= 25 C.
(mA)
(2)
(3)
32
Rev. 01 — 16 May 2007
Fig 7. Amplifier A: drain current as a function of
I
(mA)
D(A)
20
16
12
8
4
0
V
V
I
drain (AMP B) if MOSFET (B) is switched off.
internal gate1 current; typical values
D(B)
0
DS(A)
G1-S(B)
= internal gate1 current = current in pin
= 5 V; V
= 0 V; T
Dual N-channel dual gate MOSFET
G2-S
20
j
= 25 C.
= 4 V; V
DS(B)
40
= 5 V;
BF1208D
I
D(B)
© NXP B.V. 2007. All rights reserved.
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( A)
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