BF1208D NXP Semiconductors, BF1208D Datasheet - Page 15

• Manufacturer Part Number: BF1208D
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208D_1
Product data sheet
Fig 25. Amplifier B: gate1 current as a function of
Fig 27. Amplifier B: gain reduction as a function of
reduction
gain
(dB)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
I
G1
50
40
30
20
10
10
20
30
40
50
0
0
V
R
gate2 voltage; typical values
V
R
T
AGC voltage; typical values
0
0
amb
GG
GG
GG
GG
GG
DS(B)
DS(B)
G1
G1
= 86 k (connected to V
= 86 k (connected to V
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 25 C; see
= 5 V; V
= 5 V; V
1
DS(A)
GG
2
= 5 V; V
Figure
= V
G1-S(A)
2
34.
DS(A)
GG
GG
= 0 V; T
4
= V
); see
); f = 50 MHz;
G1-S(A)
3
V
(1)
(2)
(3)
(4)
(5)
G2-S
V
Figure
j
001aag369
001aag371
AGC
= 25 C;
(V)
= 0 V;
(V)
3.
6
4
Rev. 01 — 16 May 2007
Fig 26. Amplifier B: unwanted voltage
Fig 28. Amplifier B: drain current as a function of gain
(dB V)
V
(mA)
unw
I
D
120
110
100
90
80
24
18
12
6
0
V
R
f
for 1 % cross modulation as a function of gain
reduction; typical values
V
R
T
reduction; typical values
unw
0
0
amb
DS(B)
G1
DS(B)
G1
= 60 MHz; T
= 86 k (connected to V
= 86 k (connected to V
= 25 C; see
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
GG
GG
20
20
amb
= 5 V; V
= 5 V; V
Figure
= 25 C; see
34.
DS(A)
DS(A)
GG
GG
40
40
gain reduction (dB)
gain reduction (dB)
= V
= V
); f
); f = 50 MHz;
Figure
w
G1-S(A)
G1-S(A)
BF1208D
© NXP B.V. 2007. All rights reserved.
= 50 MHz;
001aag370
001aag372
34.
= 0 V;
= 0 V;
60
60
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