BF1208D NXP Semiconductors, BF1208D Datasheet - Page 9

• Manufacturer Part Number: BF1208D
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208D_1
Product data sheet
Fig 12. Amplifier A: drain current as a function of gain
Fig 14. Amplifier A: forward transfer admittance and
(mA)
(mS)
Y
I
10
D
fs
10
28
20
12
10
4
1
2
1
V
T
reduction; typical values
V
I
phase as a function of frequency; typical values
10
D(A)
0
amb
DS(A)
DS(A)
= 19 mA
= 25 C; see
= V
= 5 V; V
10
DS(B)
G2-S
= 5 V; V
Figure
20
= 4 V; V
10
G1-S(B)
2
33.
Y
fs
fs
DS(B)
30
= 0 V; f = 50 MHz;
f (MHz)
= V
gain reduction (dB)
G1-S(B)
40
001aag358
001aac197
= 0 V;
10
50
Rev. 01 — 16 May 2007
3
(deg)
10
10
1
10
fs
2
1
Fig 13. Amplifier A: input admittance as a function of
Fig 15. Amplifier A: reverse transfer admittance and
b
(mS)
( S)
is
Y
10
10
, g
rs
10
10
10
10
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
10
D(A)
D(A)
DS(A)
DS(A)
= 19 mA
= 19 mA
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
is
is
DS(B)
rs
DS(B)
rs
f (MHz)
f (MHz)
= V
= V
BF1208D
© NXP B.V. 2007. All rights reserved.
G1-S(B)
G1-S(B)
001aag357
001aag359
= 0 V;
= 0 V;
10
10
3
3
(deg)
10
10
10
1
rs
3
2
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