BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet
![RF MOSFET Small Signal LDMOS TNS](/photos/40/60/406027/sot502b_sml.jpg)
BLS6G2731S-120
Specifications of BLS6G2731S-120
Available stocks
Related parts for BLS6G2731S-120
BLS6G2731S-120 Summary of contents
Page 1
... BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
Page 2
... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless fl ...
Page 3
... L(1dB droop(pulse BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Thermal characteristics Parameter transient thermal impedance from junction to mounting base Characteristics drain-source breakdown voltage V gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance V Application information = 100 s ...
Page 4
... Table 8. f GHz 2.7 2.8 2.9 3.0 3.1 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Typical impedance Z S 3.4 j7 ...
Page 5
... 100 mA ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 4. Drain efficiency as a function of load power; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj091 G (dB) 120 160 P ( 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 3. Power gain as a function of load power; typical ...
Page 6
... G p (dB 2.65 2.75 2.85 2. 120 Fig 8. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj095 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 7. Load power as a function of input power; 001aaj097 (%) (dB 3.05 3.15 f (GHz) = 100 mA ...
Page 7
... C7, C8 multilayer ceramic chip capacitor 100 pF C12 electrolytic capacitor C13 multilayer ceramic chip capacitor SMD resistor BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 C7 C6 Value Rev. 01 — 14 November 2008 LDMOS S-band radar power transistor C13 C8 C9 C11 ...
Page 8
... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
Page 9
... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
Page 10
... LDMOST RF S-band VSWR 11. Revision history Table 11. Revision history Document ID BLS6G2731-120_6G2731S-120_1 BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status 20081114 Product data sheet Rev. 01 — ...
Page 11
... For more information, please visit: For sales office addresses, please send an email to: BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
Page 12
... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 BLS6G2731-120; BLS6G2731S-120 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-band radar power transistor All rights reserved ...