BFG590 T/R NXP Semiconductors, BFG590 T/R Datasheet - Page 4

• Manufacturer Part Number: BFG590 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG590 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG590,215

NXP Semiconductors
CHARACTERISTICS
T
Note
1. G
V
V
V
I
h
f
C
G
|S
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
re
NPN 5 GHz wideband transistors
UM
21
|
2
UM
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
PARAMETER
Rev. 04 - 12 November 2007
I
I
V
I
I
f = 1 GHz; see Fig.5
I
see Fig.4
I
f = 900 MHz; T
I
T
I
f = 900 MHz; T
C
C
E
C
C
C
C
C
C
CB
amb
= 0.1 mA; I
= 0.1 mA; I
= 10 mA; I
= 70 mA; V
= 80 mA; V
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
= 10 V; I
= 25 C
CB
12
CONDITIONS
= 8 V; f = 1 MHz;
is zero and
B
E
E
C
CE
CE
CE
CE
CE
= 0
= 0
amb
amb
= 0
= 0
= 8 V; see Fig.3
= 4 V;
= 4 V;
= 4 V; f = 2 GHz;
= 4 V;
= 25 C
= 25 C
G
UM
=
10
log
20
15
3
60
BFG590; BFG590/X
MIN.
-------------------------------------------------------------- dB.
1
–
S
120
5
0.7
13
7.5
11
TYP.
11
Product specification
S
2
21
1
2
100
250
MAX.
–
S
22
4 of 11
2
V
V
V
nA
GHz
pF
dB
dB
dB
UNIT