BFG505/X T/R NXP Semiconductors, BFG505/X T/R Datasheet - Page 3

• Manufacturer Part Number: BFG505/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG505/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG505/X,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistors
SYMBOL
(mW)
s
s
P tot
200
150
100
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
50
0
0
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
50
PARAMETER
100
PARAMETER
150
T s ( C)
MRA638-1
200
Rev. 04 - 22 November 2007
open emitter
R
open collector
T
s
BE
= 0
130 C; see Fig.2; note 1
CONDITIONS
note 1
CONDITIONS
BFG505; BFG505/X
65
MIN.
20
15
2.5
18
150
150
175
Product specification
VALUE
MAX.
290
3 of 13
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W