PMBFJ309 T/R NXP Semiconductors, PMBFJ309 T/R Datasheet - Page 6

• Manufacturer Part Number: PMBFJ309 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBFJ309,215

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 6. Typical output characteristics; PMBFJ308.
Fig 8. Typical output characteristics; PMBFJ309.
(mA)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(1) V
(2) V
(3) V
(4) V
(5) V
I
I
D
D
16
12
20
16
12
8
4
0
8
4
0
T
T
0
0
j
j
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 25 C.
= 25 C.
= 0 V.
= 0.25 V.
= 0.5 V.
= 0.75 V.
= 1 V.
= 0 V.
= 0.25 V.
= 0.5 V.
= 0.75 V.
= 1 V.
4
4
8
8
(1)
(2)
(3)
(4)
(5)
12
12
PMBFJ308; PMBFJ309; PMBFJ310
(1)
(2)
(3)
(4)
(5)
V
V
DS
DS
mcd216
mcd218
(V)
(V)
16
16
Rev. 03 — 23 July 2004
Fig 7. Typical transfer characteristics; PMBFJ308.
Fig 9. Typical transfer characteristics; PMBFJ309.
(mA)
(mA)
I
I
D
D
16
12
20
16
12
8
4
0
8
4
0
V
V
2
DS
2
DS
= 10 V; T
= 10 V; T
N-channel silicon field-effect transistors
1.5
1.5
j
j
= 25 C.
= 25 C.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
1
0.5
0.5
V
V
GS
GS
mcd213
mcd215
(V)
(V)
0
0
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