BF1206 NXP Semiconductors, BF1206 Datasheet - Page 3

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2003 Nov 17
BF1206
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
G1
G2
TYPE NUMBER
SYMBOL
stg
j
DS
tot
Dual N-channel dual-gate MOS-FET
th j-s
s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
PARAMETER
NAME

plastic surface mounted package; 6 leads
PARAMETER
T
s
CAUTION
 107 C; note 1
3
DESCRIPTION
PACKAGE
CONDITIONS
VALUE
240





65

MIN.
Product specification
6
30
10
10
180
+150
150
MAX.
BF1206
VERSION
SOT363
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT