BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 5
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BFG540W/X T/R
Manufacturer Part Number
BFG540W/X T/R
Description
RF Bipolar Small Signal NPN 8V 120mA 9GHZ
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540WX115.pdf
(17 pages)
Specifications of BFG540W/X T/R
Dc Collector/base Gain Hfe Min
100
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-343
Other names
BFG540W/X,115
NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f
h FE
250
200
150
100
T
= 8 V.
50
12
0
10
8
4
0
10
−2
DC current gain as a function of
Transition frequency as a function of
collector current; typical values.
collector current; typical values.
1
amb
= 25 C.
10
−1
1
1
10
10
I
C
V
V
I C (mA)
CE
CE
(mA)
MRA749
MLC044
= 8 V
= 4 V
10
10
2
2
5
handbook, halfpage
Fig.5
I
C
(pF)
C re
= 0; f = 1 MHz.
0.8
0.6
0.4
0.2
1
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
BFG540W/X; BFG540W/XR
4
8
Product specification
V CB (V)
BFG540W
MRA750
12