STPS30H60CW STMicroelectronics, STPS30H60CW Datasheet - Page 3

• Manufacturer Part Number: STPS30H60CW
• Description: DIODE SCHOTTKY 60V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS30H60CW

• Voltage - Forward (vf) (max) @ If: 660mV @ 15A
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-5138-5

STPS30H60C
Figure 1.
Figure 3.
Figure 5.
1.E+00
1.E-02
1.E-03
1.E-01
12
10
8
6
4
2
0
1.E-02
0
P
200
180
160
140
120
100
P
80
60
40
20
F(AV)
1.E-03
P
0
ARM
ARM p
I (A)
M
2
(W)
(1µs)
I
M
(t )
1.E-01
Conduction losses versus
average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB, TO-247 D
δ
4
=0.5
t
1.E-02
δ=0.05
6
1.E+00
I
F(AV)
t (µs)
8
p
t(s)
δ=0.1
(A)
10
1.E+01
1.E-01
δ=0.2
12
2
PAK, I
1.E+02
14
δ
=tp/T
T
T
T
C
C
C
δ=0.5
=125°C
=50°C
=75°C
T
16
1.E+00
2
PAK)
tp
δ=1
1.E+03
18
Figure 2.
Figure 4.
Figure 6.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
18
16
14
12
10
8
6
4
2
0
120
100
25
80
60
40
20
0
I
1.E-03
P
0
F(AV)
P
ARM
I (A)
ARM p
M
I
M
(A)
(25°C)
25
(t )
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
50
δ
=0.5
t
50
1.E-02
R
th(j-a)
75
=15 °C/W
T
75
amb
t(s)
T (°C)
j
(°C)
100
TO-220FPAB
100
1.E-01
R
th(j-a)
125
=R
Characteristics
th(j-c)
TO-220FPAB
125
T
T
T
C
C
C
=125 °C
150
=50 °C
=75 °C
1.E+00
175
150
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