STTH2003CFP STMicroelectronics, STTH2003CFP Datasheet - Page 2

• Manufacturer Part Number: STTH2003CFP
• Description: DIODE FAST DL 300V 10A TO220FPAB
• Manufacturer: STMicroelectronics

Specifications of STTH2003CFP

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 10 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 110 A
• Reverse Current Ir: 20 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Capacitance, Junction: 12 pF
• Current, Forward: 20 A
• Current, Surge: 110 A
• Package Type: TO-220FPAB
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 4 °C/W
• Speed, Switching: Fast Recovery
• Temperature, Junction, Maximum: +175 °C
• Time, Recovery: 35 ns
• Voltage, Forward: 1 V
• Voltage, Reverse: 300 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4407-5

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
Note:
2/11
Symbol
Symbol
Symbol
I
I
R
V
F(RMS)
F(peak)
R
V
I
I
I
T
RSM
FSM
th(j-c)
R
RRM
T
th(c)
F
stg
(1)
(2)
j
Repetitive peak reverse voltage
RMS forward voltage
Peak working forward
current δ = 0.5
Surge non repetitive forward current
Non repetitive avalanche current
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.75 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
F(AV)
+ 0.025 I
I
TO-220FPAB
I
TO-220FPAB
2
2
I
TO-220AB
TO-220FPAB
2
PAK, D
PAK, D
PAK, D
F
Parameter
2
(RMS))
Parameter
2
2
2
PAK, TO-220AB
PAK, TO-220AB Coupling
T
T
T
T
PAK,
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
Test conditions
T
T
t
t
p
p
c
c
= 10 ms sinusoidal
= 10 µs square
= 140°C
= 125°C
V
I
F
R
Per diode
Total
Per diode
Total
Coupling
= 10 A
= 300 V
Per diode
Per device
Min.
Value (max)
0.85
Typ
30
2.5
1.3
4.6
0.1
3.5
-65 to + 175
4
Value
300
110
175
30
10
20
5
Max.
1.25
300
STTH2003C
20
1
°C/W
Unit
Unit
Unit
°C
°C
µA
A
V
A
A
A
V