BAV199,235 NXP Semiconductors, BAV199,235 Datasheet - Page 2

• Manufacturer Part Number: BAV199,235
• Description: DIODE SW DUAL 75V 160MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV199,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Current - Average Rectified (io) (per Diode): 160mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 3µs
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.16 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032640235; BAV199 /T3; BAV199 /T3

NXP Semiconductors
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATION
• Low-leakage current applications in
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
max. 75 V
max. 85 V
max. 500 mA.
surface mounted circuits.
stg
j
RRM
R
tot
Low-leakage double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
MARKING
Note
1. ∗ = p: Made in Hong Kong.
handbook, 4 columns
TYPE NUMBER
∗ = t: Made in Malaysia.
∗ = W: Made in China.
BAV199
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
see Fig.4
T
amb
t
t
t
p
p
p
= 1 µs
= 1 ms
= 1 s
= 25 °C; note 1
Top view
Fig.1 Simplified outline (SOT23) and symbol.
2
CONDITIONS
2
MARKING
CODE
j
= 25 °C prior to surge;
JY∗
3
(1)
1
PINNING
PIN
1
2
3
2
−
−
−
−
−
−
−
−
−
−65
−
MIN.
anode
cathode
anode; cathode
3
DESCRIPTION
Product data sheet
85
75
160
140
500
4
1
0.5
250
+150
150
MAM107
MAX.
BAV199
1
V
V
mA
mA
mA
A
A
A
mW
°C
°C
UNIT