BAV23S,235 NXP Semiconductors, BAV23S,235 Datasheet - Page 12

• Manufacturer Part Number: BAV23S,235
• Description: DIODE G-P DUAL 200V 225MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV23S,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 225mA (DC)
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.225 A
• Max Surge Current: 9 A
• Configuration: Dual Series
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933947770235; BAV23S /T3; BAV23S /T3

BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
14. Contact information
For more information, please visit:
http://www.nxp.com
For sales office addresses, please send an email to:
[e-mail]
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
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