BAW56S,115 NXP Semiconductors, BAW56S,115 Datasheet
BAW56S,115
Manufacturer Part Number
BAW56S,115
Description
DIODE ARRAY 90V 250MA H-S SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BAW56S115.pdf
(15 pages)
Specifications of BAW56S,115
Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io) (per Diode)
250mA (DC)
Diode Configuration
2 Pair Series Connection
Product
Switching Diodes
Peak Reverse Voltage
90 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Double Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934045730115::BAW56S T/R::BAW56S T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
I
I
I
I
I
Table 2.
[1]
Type number Package
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Symbol
Per diode
I
V
t
R
rr
R
BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007
High switching speed: t
Low leakage current
Small SMD plastic packages
High-speed switching
General-purpose switching
When switched from I
Product overview
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
NXP
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
F
= 10 mA to I
JEITA
SC-88
-
SC-101
SC-88
SC-75
SC-70
rr
4 ns
R
= 10 mA; R
JEDEC
-
TO-236AB small
-
-
-
-
Conditions
V
R
= 80 V
L
= 100 ; measured at I
I
I
Low capacitance: C
Reverse voltage: V
Package
configuration
very small
leadless ultra
small
very small
ultra small
very small
[1]
Min
-
-
-
R
= 1 mA.
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
Typ
-
-
-
Product data sheet
R
d
90 V
2 pF
Max
0.5
90
4
Unit
V
ns
A
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