UMR12NTN Rohm Semiconductor, UMR12NTN Datasheet - Page 2

• Manufacturer Part Number: UMR12NTN
• Description: DIODE SW 80V 100MA SOT-363 TR
• Manufacturer: Rohm Semiconductor

Specifications of UMR12NTN

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 80V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Diodes
Electrical characteristic curves (Ta=25°C)
0.0001
0.001
0.01
100
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
0.1
10
10
10
1
0
1
1
1
0
0
0
100 200 300 400 500 600 700 800 900 1000 1100
D2
1
D1
10
Ct12
D1
FORWARD VOLTAGE：VF(mV)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE：VR(V)
2
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
20
IR DISPERSION MAP
Ta=150℃
3
AVE:0.1065nA
Ta=125℃
30
4
Ta=75℃
40
5
6
50
Ta=150℃
7
Ta=25℃
60
VR=15V
n=30pcs
8
f=1MHz
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
70
9
10
80
990
980
970
960
950
940
100
0.1
0.1
10
10
10
9
8
7
6
5
4
3
2
1
0
1
1
0
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
D2
Ct32
1
D1
D2
Ta=150℃
FORWARD VOLTAGE：VF(mV)
2
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS
Ta=125℃
VF DISPERSION MAP
IR DISPERSION MAP
3
AVE:961.5mV
AVE:0.620nA
Ta=75℃
4
5
6
7
Ta=25℃
IF=100mA
Ta=25℃
n=30pcs
Ta=25℃
n=30pcs
VR=15V
f=1MHz
8
Ta=-25℃
9
10
0.00001
0.0001
0.001
1060
1050
1040
1030
1020
1010
0.01
100
0.1
0.1
10
10
1
1
5
4
3
2
1
0
0
0
Ct13
D1
1
10
Ct32
D2
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
2
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
20
VF DISPERSION MAP
3
Ct DISPERSION MAP
AVE:1035.0mV
30
4
AVE:3.34pF
Ta=150℃
40
5
Rev.A
6
50
Ta=75℃
Ta=-25℃
Ta=25℃
UMR12N
7
60
Ta=125℃
IF=100mA
8
Ta=25℃
n=30pcs
Ta=25℃
VR=0V
f=1MHz
n=10pcs
f=1MHz
70
9
80
10
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