UMR12NTN Rohm Semiconductor, UMR12NTN Datasheet - Page 3

• Manufacturer Part Number: UMR12NTN
• Description: DIODE SW 80V 100MA SOT-363 TR
• Manufacturer: Rohm Semiconductor

Specifications of UMR12NTN

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 80V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Diodes
0.1
15
14
13
12
11
10
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
1
1
Ct13
D2
Ifsm
AVE:1.87kV
C=200pF
R=0Ω
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
Ct DISPERSION MAP
t
10
AVE:3.64pF
TIME:t(ms)
AVE:13.56kV
C=100pF
R=1.5kΩ
100
D1
D2
VR=6V
Ta=25℃
VR=0V
f=1MHz
n=10pcs
1000
1000
100
5
4
3
2
1
0
10
0.001
Ct12
Ct DISPERSION MAP
Rth-t CHARACTERISTICS
0.1
AVE:1.86pF
TIME:t(s)
Mounted on epoxy board
IM=1mA
1ms
300us
10
time
Ta=25℃
VR=0V
f=1MHz
n=10pcs
IF=50mA
Rth(j-a)
Rth(j-c)
1000
10
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0
D1
AVE:0.670kV
FORWARD CURRENT:IF(mA)
2
C=200pF
trr-IF CHARACTERISTICS
R=0Ω
ESD DISPERSION MAP
4
Rev.A
AVE:6.43kV
6
D2
UMR12N
C=100pF
R=1.5kΩ
VR=6V
8
D1
10
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