BAT54XY,115 NXP Semiconductors, BAT54XY,115 Datasheet - Page 4

• Manufacturer Part Number: BAT54XY,115
• Description: DIODE SCHOTTKY 30V 200MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BAT54XY,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Double Dual Series
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3417-2; 934059127115; BAT54XY T/R

NXP Semiconductors
BAT54XY_2
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
10
I
F
10
10
10
−1
1
3
2
Forward current as a function of forward
voltage; typical values
T
Diode capacitance as a function of reverse voltage; typical values
0
(1)
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= 25 °C; f = 1 MHz
(2)
(3)
0.4
(1)
(2)
0.8
(pF)
(3)
C
15
d
10
0
5
0
V
F
(V)
msa892
Schottky barrier quadruple diode in very small SOT363 package
Rev. 02 — 13 January 2010
1.2
10
Fig 2.
20
(μA)
(1) T
(2) T
(3) T
10
I
10
10
R
10
−1
1
3
2
0
Reverse current as a function of reverse
voltage; typical values
V
amb
amb
amb
R
(V)
msa891
= 125 °C
= 85 °C
= 25 °C
30
10
20
BAT54XY
© NXP B.V. 2010. All rights reserved.
V
R
(1)
(2)
(3)
(V)
msa893
30
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