STPS640CB STMicroelectronics, STPS640CB Datasheet - Page 2
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STPS640CB
Manufacturer Part Number
STPS640CB
Description
DIODE SCHOTTKY 40V 3A DPAK
Manufacturer
STMicroelectronics
Datasheet
1.STPS640CB-TR.pdf
(9 pages)
Specifications of STPS640CB
Voltage - Forward (vf) (max) @ If
630mV @ 3A
Current - Reverse Leakage @ Vr
100µA @ 40V
Current - Average Rectified (io) (per Diode)
3A
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
75 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.84 V @ 6 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS640CB-TR
Manufacturer:
ST
Quantity:
20 000
Characteristics
1
2/9
Characteristics
Table 1.
Table 2.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x I
Symbol
Symbol
Symbol
I
Tj(diode 1) = P(diode1) x R
R
V
F(RMS)
P
dV/dt
I
I
R
I
V
F(AV)
T
RRM
I
FSM
ARM
th (j-c)
RRM
R
T
F
stg
th(c
(1)
j
(1)
)
Repetitive peak reverse voltage
RMS forward voltage
Average forward current δ = 0.5
Surge non repetitive forward
current
Repetitive peak reverse current
Repetitive peak avalanche power t
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Reverse leakage current
Forward voltage drop
Junction to case
Coupling
F(AV)
Absolute ratings (limiting values, per diode)
Thermal resistances
Static electrical characteristics (per diode)
+ 0.050 I
Parameter
F
2
(RMS)
th(j-c)
(Per diode) + P(diode 2) x R
Parameter
Parameter
TO-220AB / DPAK
TO-220FPAB
TO-220AB
TO-220FPAB
T
T
T
T
T
T
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 25° C
= 125° C
= 125° C
TO-220AB /TO-220FPAB
DPAK
TO-220AB
TO-220FPAB
DPAK
t
t
p
p
p
Test Conditions
= 2 µs square F = 1 kHz
= 10 ms Sinusoidal
= 1 µs T
j
= 25° C
V
I
I
I
I
F
F
F
F
R
= 3 A
= 6 A
= 3 A
= 6 A
= V
Per diode
Total
Per diode
Total
RRM
T
T
T
c
c
c
th(c)
= 135° C
= 130° C
= 120° C
Min.
-65 to + 150
Typ.
0.67
0.5
2
Value
10000
Value
1300
5.5
5.5
5.2
0.5
150
40
10
75
3
3
6
3
1
Max.
0.63
0.84
0.57
0.72
100
10
STPS640C
°C/W
°C/W
Unit
V/µs
Unit
° C
° C
Unit
W
V
A
A
A
A
mA
µA
V