STPS16H100CG-TR STMicroelectronics, STPS16H100CG-TR Datasheet - Page 2

• Manufacturer Part Number: STPS16H100CG-TR
• Description: DIODE SCHOTTKY 100V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS16H100CG-TR

• Voltage - Forward (vf) (max) @ If: 770mV @ 8A
• Current - Reverse Leakage @ Vr: 3.6µA @ 100V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS16H100CT/CG/CFP/CR
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.55 x I
Fig. 1: Conduction losses versus average current.
7
6
5
4
3
2
1
0
2/7
When the diodes 1 and 2 are used simultaneously :
Symbol
Symbol
0
P
R
Tj(diode 1) = P(diode1) x R
R
F(AV)
V
th (j-c)
I
th (c)
R
F
(W)
**
*
1
2
Junction to ambient
F(AV)
* tp = 5 ms, < 2%
** tp = 380 µs, < 2%
Reverse leakage Current
Forward Voltage drop
3
+ 0.011 x I
= 0.05
Parameter
4
I
= 0.1
F(AV)
5
(A)
F
2
= 0.2
(RMS)
6
th(j-c)
(Per diode) + P(diode 2) x R
7
= 0.5
TO-220AB / D
TO-220FPAB
TO-220AB / D
TO-220FPAB
TO-220AB / D
TO-220FPAB
8
=tp/T
Parameter
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125 C
Tj = 25°C
Tj = 125°C
= 1
T
9
Tests Conditions
tp
10
2
2
2
PAK / I
PAK / I
PAK / I
Fig. 2: Average forward current versus ambient
temperature ( =0.5).
9
8
7
6
5
4
3
2
1
0
0
I
V
I
I
I
I
F(AV)
F
F
F
F
R
= 8 A
= 8 A
= 16 A
= 16 A
=tp/T
(A)
2
2
2
= V
PAK
PAK
PAK
25
T
th(c)
RRM
tp
50
Coupling
Per diode
Total
Min.
Rth
(j-a)
Rth
=50°C/W
75
(j-a)
=Rth
T
amb
(j-c)
(°C)
Typ.
0.59
0.67
1.6
100
Value
1.6
1.1
3.5
0.6
4
3
TO-220AB/D²PAK/I²PAK
Max.
0.77
0.64
0.88
0.73
125
3.6
5
150
°C/W
°C/W
°C/W
Unit
Unit
mA
µA
V
175