STTH1602CT STMicroelectronics, STTH1602CT Datasheet - Page 4

DIODE FAST 200V 10A TO-220AB

STTH1602CT

Manufacturer Part Number
STTH1602CT
Description
DIODE FAST 200V 10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1602CT

Voltage - Forward (vf) (max) @ If
1.1V @ 8A
Current - Reverse Leakage @ Vr
6µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
26ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V at 16 A
Recovery Time
26 ns
Forward Continuous Current
20 A
Max Surge Current
80 A
Reverse Current Ir
6 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3544-5

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STTH1602C
Fig. 5: Reverse recovery charges versus dI
(typical values, per diode).
280
260
240
220
200
180
160
140
120
100
Fig. 7: Peak reverse recovery current versus dI
(typical values, per diode).
16
14
12
10
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
80
70
60
50
40
30
20
10
4/7
80
60
40
20
8
6
4
2
0
0
0
10
0
10
I
R
RM
Q (nC)
th(j-a)
rr
I =8A
V =160V
I =8A
V =160V
(A)
F
F
R
R
2
(°C/W)
4
6
CU
S(Cu)(cm²)
dI /dt(A/µs)
8
dI /dt(A/µs)
: 35µm) for D
F
T =125°C
T =125°C
j
j
F
100
100
10
12
14
2
T =25°C
j
PAK.
T =25°C
j
16
18
F
F
1000
1000
/dt
/dt
20
Fig. 6: Reverse recovery time versus dI
(typical values, per diode).
80
70
60
50
40
30
20
10
Fig. 8:
temperature.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
25
t (ns)
Q ;
rr
rr
I =8A
V =160V
I =8A
V =160V
F
F
R
R
I
RM
[T ]/Q ;I
j
Dynamic parameters versus junction
50
rr RM
[T =125°C]
I
T =125°C
RM
j
j
75
dI /dt(A/µs)
Q
F
rr
T (°C)
100
j
100
T =25°C
j
125
F
1000
/dt
150

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