STPS41H100CG-TR STMicroelectronics, STPS41H100CG-TR Datasheet - Page 2

• Manufacturer Part Number: STPS41H100CG-TR
• Description: DIODE SCHOTTKY 100V 20A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS41H100CG-TR

• Voltage - Forward (vf) (max) @ If: 800mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6585-2; STPS41H100CG-TR

STPS41H100CG/CT/CR
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.58 x I
Fig. 1: Conduction losses versus average current.
16
14
12
10
2/6
8
6
4
2
0
Symbol
Symbol
R
Tj(diode 1) = P(diode1) x R
0
R
PF(av)(W)
V
th(j-c)
I
th(c)
R
F
*
*
F(AV)
Junction to case
Coupling
5
= 0.05
Reverse leakage current
Forward voltage drop
+ 0.0045 I
= 0.1
Parameter
10
IF(av)(A)
= 0.2
F
2
(RMS)
th(j-c)
15
(Per diode) + P(diode 2) x R
= 0.5
Parameter
20
=tp/T
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
= 1
T
Tests Conditions
tp
25
Fig. 2: Average forward current versus ambient
temperature ( = 0.5).
22
20
18
16
14
12
10
8
6
4
2
0
V
I
I
I
I
F
F
F
F
0
IF(av)(A)
R
= 20 A
= 20 A
= 40 A
= 40 A
=tp/T
= V
T
Per diode
th(c)
RRM
25
tp
Total
Rth(j-a)=50°C/W
50
Min.
Tamb(°C)
Rth(j-a)=Rth(j-c)
75
Typ.
0.62
0.70
Value
3
100
1.5
0.8
0.1
Max.
0.80
0.67
0.90
0.76
125
10
10
150
Unit
Unit
C/W
mA
µA
V
175