STPS41L60CG STMicroelectronics, STPS41L60CG Datasheet - Page 3

• Manufacturer Part Number: STPS41L60CG
• Description: DIODE SCHOTTKY 60V 20A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS41L60CG

• Voltage - Forward (vf) (max) @ If: 600mV @ 20A
• Current - Reverse Leakage @ Vr: 600µA @ 60V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS41L60C
Figure 3.
Figure 5.
Figure 7.
250
225
200
175
150
125
100
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0.001
75
50
25
1.E-03
0.01
0
0.1
0.01
I (A)
1
M
P
0
I (mA)
P
R
I
ARM
M
ARM p
5
(1µs)
(t )
δ
=0.5
t
0.1
10
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Reverse leakage current versus
reverse voltage applied
(typical values)
15
1.E-02
20
1
25
t (µs)
t(s)
p
Tj=150°C
Tj=125°C
Tj=100°C
Tj=50°C
V (V)
Tj=75°C
Tj=25°C
R
30
10
35
1.E-01
40
45
100
Tc=25 °C
Tc=75 °C
Tc=125 °C
50
55
1.E+00
1000
60
Figure 4.
Figure 6.
Figure 8.
1.2
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10.0
1.0
0.1
1
0
1.E-03
0
P
Z
1
P
ARM
th(j-c)
C(nF)
Single pulse
ARM p
(25°C)
/R
(t )
th(j-c)
25
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
Junction capacitance versus
reverse voltage applied
(typical values)
1.E-02
50
T (°C)
t (s)
j
p
75
10
V (V)
R
1.E-01
100
Characteristics
δ
=tp/T
V
125
OSC
F=1 MHz
Tj=25 °C
= 30 mV
T
tp
1.E+00
150
100
3/8