STPS3060CW STMicroelectronics, STPS3060CW Datasheet - Page 3

• Manufacturer Part Number: STPS3060CW
• Description: DIODE SCHOTTKY 60V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS3060CW

• Voltage - Forward (vf) (max) @ If: 850mV @ 15A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
160
140
120
100
Fig. 5: Reverse leakage currrent versus reverse
voltage applied (typical values, per diode).
1.E+01
1.E+00
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
1000
1.E-01
1.E-02
1.E-03
80
60
40
20
100
1.E-03
0
10
1
0.0
I (A)
M
I
FM
I
5
M
I (mA)
R
(A)
0.2
10
=0.5
t
T =125°C
j
15
0.4
1.E-02
20
0.6
25
0.8
T =125°C
T =100°C
T =75°C
T =50°C
V
j
j
j
j
V (V)
t(s)
30
FM
R
(V)
1.0
35
1.E-01
40
1.2
45
1.4
50
T =110°C
T =50°C
T =75°C
C
1.6
C
C
55
1.E+00
1.8
60
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10000
1000
1.E-03
100
Z
Single pulse
th(j-c)
1
= 0.5
= 0.2
= 0.1
C(pF)
/R
th(j-c)
1.E-02
t (s)
p
V (V)
R
10
1.E-01
STPS3060CW
=tp/T
V
OSC
T
F=1MHz
T =25°C
=30mV
j
tp
1.E+00
RMS
3/4
100