DPG60C200HB IXYS, DPG60C200HB Datasheet

no-image

DPG60C200HB

Manufacturer Part Number
DPG60C200HB
Description
DIODE HFRED 200V 2X30A TO-247
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet

Specifications of DPG60C200HB

Voltage - Forward (vf) (max) @ If
1.34V @ 30A
Current - Reverse Leakage @ Vr
1µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247
Vrrm, (v)
200
Ifavm, D = 0.5, Total, (a)
60
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
135
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
360
Vf, Max, Tvj =150°c, (v)
1.06
@ If, (a)
30
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
7.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.95
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 60 C 200 HB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2010 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
150
30
Data according to IEC 60747and per diode unless otherwise specified
200
200
=
30
60
30
60
1
A;
V;
V
V
A
A
A
A
200
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
2
130
0.5
V
3
T
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 135°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
DPG 60 C 200 HB
● Housing:
V
I
t
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
TO-247
2x
typ.
200
50
35
55
Backside: cathode
30
35 ns
3
7
max.
1.34
1.63
1.06
1.39
0.70
10.5
0.95
V
A
200
175
160
360
0.1
30
1
20100125b
Unit
K/W
mΩ
mA
µA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A

Related parts for DPG60C200HB

DPG60C200HB Summary of contents

Page 1

... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... Standard IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Conditions 1) per pin Part Name Marking on Product DPG60C200HB Similar Part Package DPG60C200QB TO-3P (3) DPF60C200HB TO-247AD (3) DPF60C200HJ ISOPLUS247 (3) Data according to IEC 60747and per diode unless otherwise specified ...

Page 3

... Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15 ...

Page 4

... rec [µ 200 400 600 -di /dt [A/µs] F Fig. 7 Typ. recovery energy E versus -di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © 0 0 [µC] 0 125° 130 200 400 600 -di /dt [A/µs] F Fig. 2 Typ. reverse recovery charge ...

Related keywords