STTH2003CT STMicroelectronics, STTH2003CT Datasheet - Page 4

• Manufacturer Part Number: STTH2003CT
• Description: DIODE 300V 2X10A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STTH2003CT

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 10 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 110 A
• Reverse Current Ir: 20 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2743-5

Characteristics
4/11
Figure 1.
Figure 3.
Figure 5.
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
16
14
12
10
8
6
4
2
0
8
6
4
2
0
1E-3
0
P1(W)
0
I
Z
RM
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
V =200V
T =125°C
j
R
(A)
50
/R
2
th(j-c)
100
Conduction losses versus average
forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB / D
I
Peak reverse recovery current
versus dI
diode)
I =0.5 x I
F
2
δ = 0.05
PAK)
150
1E-2
F(AV)
4
200
δ = 0.1
I =I
F
F(AV)
F
dI /dt(A/µs)
I
/dt (90% confidence, per
F(AV)
F
t (s)
250
p
6
I =2 x I
δ = 0.2
F
(A)
300
F(AV)
1E-1
8
350
δ = 0.5
δ
=tp/T
400
δ
=tp/T
10
T
450
δ = 1
2
T
PAK /
tp
tp
1E+0
500
12
Figure 2.
Figure 4.
Figure 6.
200
100
1.0
0.8
0.6
0.4
0.2
0.0
100
10
80
60
40
20
1E-2
0
1
0.50
Z
0
t (ns)
I
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
FM
rr
(A)
0.75
50
/R
th(j-c)
100
1.00
Forward voltage drop versus
forward current (maximum values,
per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-22FP0AB)
Reverse recovery time versus dI
(90% confidence, per diode)
I =I
F
T =125°C
150
j
1.25
F(AV)
1E-1
I =2 x I
F
200
1.50
dI /dt(A/µs)
F(AV)
F
T =75°C
j
t (s)
V
p
250
1.75
FM
(V)
T =25°C
I =0.5 x I
j
F
300
2.00
1E+0
F(AV)
350
2.25
δ
=tp/T
STTH2003C
400
2.50
T
450
2.75
V =200V
T =125°C
j
R
tp
F
1E+1
/dt
3.00
500