STTH2003CT STMicroelectronics, STTH2003CT Datasheet - Page 4
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STTH2003CT
Manufacturer Part Number
STTH2003CT
Description
DIODE 300V 2X10A TO-220AB
Manufacturer
STMicroelectronics
Specifications of STTH2003CT
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
20µA @ 300V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
300 V
Forward Voltage Drop
1.25 V at 10 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
110 A
Reverse Current Ir
20 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2743-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STTH2003CT
Manufacturer:
STMicroelectronics
Quantity:
859
Company:
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
1 000
Part Number:
STTH2003CT
Manufacturer:
ST
Quantity:
20 000
Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
16
14
12
10
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
8
6
4
2
0
8
6
4
2
0
0
0
V
I
RM
0
FP
S factor
V =200V
T =125°C
I =I
T =125°C
F
j
j
R
(A)
(V)
F(AV)
50
50
50
100
100
100
Peak reverse recovery current
versus dI
diode)
I =0.5 x I
Softness factor (tb/ta) versus dI
(typical values, per diode)
Transient peak forward voltage
versus dI
diode) (TO-220AB)
F
150
150
150
F(AV)
200
I =I
200
F
200
F(AV)
dI /dt(A/µs)
F
F
dI /dt(A/µs)
dI /dt(A/µs)
/dt (90% confidence, per
/dt (90% confidence, per
F
F
F
250
250
250
I =2 x I
F
300
300
F(AV)
300
350
350
350
400
400
400
Doc ID 5377 Rev 9
450
450
450
V =200V
T =125°C
R
j
F
/dt
500
500
500
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
80
60
40
20
0
0
25
0
0
t (ns)
t (ns)
fr
rr
50
50
100
100
Reverse recovery time versus dI
(90% confidence, per diode)
Relative variation of dynamic
parameters versus junction
temperature (reference: T
(90% confidence, per diode)
50
I =I
F
150
150
F(AV)
I =2 x I
F
200
200
dI /dt(A/µs)
dI /dt(A/µs)
S factor
I
RM
F(AV)
F
F
T (°C)
250
250
75
j
I =0.5 x I
F
300
300
F(AV)
350
350
100
V =1.1 x V max.
FR
400
400
T =125°C
j
I =I
F
j
STTH2003
= 125 °C)
F(AV)
F
450
450
V =200V
T =125°C
j
R
F
F
/dt
/dt
500
125
500