DSEC16-06AC IXYS, DSEC16-06AC Datasheet
DSEC16-06AC
Manufacturer Part Number
DSEC16-06AC
Description
DIODE ARRAY 600V 10A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEC16-06AC.pdf
(2 pages)
Specifications of DSEC16-06AC
Voltage - Forward (vf) (max) @ If
2.1V @ 10A
Current - Reverse Leakage @ Vr
60µA @ 60V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
ISOPLUS220™
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
85
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
50
Vf, Max, Tvj =150°c, (v)
1.42
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
3.5
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
3.00
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerDynFRED
ISOPLUS220
Electrically Isolated Back Surface
V
600
Symbol
I
I
I
E
I
T
T
T
P
V
F
Weight
Symbol
I
V
R
R
t
I
Notes: Data given for T
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
FRMS
FAVM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
C
F
RSM
AS
tot
ISOL
thJC
thCH
‚
‚ Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
ƒ Pulse test: pulse Width = 300 ms, Duty Cycle < 2.0 %
V
600
RRM
V
Conditions
T
T
T
I
V
T
50/60 Hz RMS; I
mounting force with clip
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 10 A;
= 1 A; -di/dt = 50 A/µs;
= 25°C
= 85°C; rectangular, d = 0.5
= 0.9 A; L = 180 µH
= 1.5·V
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
VJ
= 25
Type
DSEC16-06AC
TM
R
typ.; f = 10 kHz; repetitive
VJ
p
T
T
F
= 10 ms (50 Hz), sine
O
VJ
VJ
R
R
= 25°C
C and per diode unless otherwise specified
= 12 A; -di
= V
= V
= 125°C
= 25°C
ISOL
TM
RRM
RRM
£
1 mA
Epitaxial Diode
F
/dt = 100 A/µs
ADVANCE TECHNICAL INFORMATION
1
typ.
0.4
35
Characteristic Values
-55...+175
-55...+150
Maximum Ratings
20...120
2
max.
2500
0.25
1.42
2.10
175
4.4
60
0.1
0.1
35
10
50
50
3
3
3
K/W
K/W
mA
mJ
V~
µA
°C
°C
°C
ns
W
N
A
A
A
A
V
V
A
g
ISOPLUS220
* Patent pending
I
V
t
Features
l
l
l
l
l
l
l
l
Applications
l
l
l
l
l
l
l
l
Advantages
l
l
l
FAV
rr
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
RM
RM
1
-values
2
= 2x10 A
= 600 V
= 35 ns
reduces:
3
DSEC16-06AC
TM
Isolated back surface *
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DSEC16-06AC Summary of contents
Page 1
... Maximum Ratings 0.1 0.1 -55...+175 175 -55...+150 2500 20...120 Characteristic Values typ. max. 60 0.25 1.42 2.10 0.4 35 /dt = 100 A/µs 4.4 F DSEC16-06AC I = 2x10 A FAV V = 600 V RRM ISOPLUS220 Patent pending A Features A Silicon chip on Direct-Copper-Bond A l substrate mJ - High power dissipation - Isolated mounting surface ...
Page 2
... ISOPLUS220 OUTLINE Note: All terminals are solder plated Anode 2 - Common Cathode 3 - Anode DSEC16-06AC ...