DSEE6-06CC IXYS, DSEE6-06CC Datasheet
DSEE6-06CC
Manufacturer Part Number
DSEE6-06CC
Description
DIODE HFRED 600V 6A ISOPLUS220
Manufacturer
IXYS
Series
HiPerDynFRED™r
Datasheet
1.DSEE6-06CC.pdf
(2 pages)
Specifications of DSEE6-06CC
Voltage - Forward (vf) (max) @ If
1.8V @ 10A
Current - Reverse Leakage @ Vr
25µA @ 600V
Current - Average Rectified (io) (per Diode)
6A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
20ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Through Hole, Radial
Package / Case
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
HiPerDynFRED
ISOPLUS220
Electrically Isolated Back Surface
V
600
Symbol
I
I
E
I
T
T
T
P
V
F
Weight
Symbol
I
V
R
R
t
I
Notes: Data given for T
IXYS reserves the right to change limits, test conditions and dimensions.
FRMS
FAVM
AR
R
RM
rr
V
VJ
VJM
stg
C
RRM
AS
tot
ISOL
F
thJC
thCH
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
V
300
RRM
V
Conditions
T
T
I
V
T
50/60 Hz RMS; I
Mounting force
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
C
VJ
VJ
VJ
A
R
R
= 10 A;
= 1 A; -di/dt = 50 A/µs;
= 150°C; rectangular, d = 0.5
= 0.8 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; I
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
VJ
= 25
Type
DSEE 6-06CC
TM
R
typ.; f = 10 kHz; repetitive
VJ
T
T
F
O
VJ
VJ
R
R
= 25°C
C and per diode unless otherwise specified
= 10 A; -di
= V
= V
= 125°C
= 25°C
ISOL
TM
RRM
RRM
≤
1 mA
Epitaxial Diode
F
/dt = 100 A/µs
ADVANCE TECHNICAL INFORMATION
typ.
Characteristic Values
0.6
20
2
11...65 / 2.4...11 N / lb
Maximum Ratings
-40...+175
-40...+150
1
2500
175
0.1
0.1
20
50
6
2
max.
1.35
0.2
1.8
3.0
25
2
K/W
K/W
3
mA
Recommended replacement:
DSEE8-08CC
mJ
V~
µA
°C
°C
°C
ns
W
A
A
A
V
V
A
g
I
V
t
Features
λ
λ
λ
λ
λ
λ
λ
λ
Applications
λ
λ
λ
λ
λ
λ
λ
λ
Advantages
λ
λ
λ
ISOPLUS 220
FAV
rr
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
E153432
RM
RM
-values
= 6 A
= 600 V
= 20 ns
reduces:
DSEE 6-06CC
Isolated back surface*
DS98915B(07/03)
20080317a
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DSEE6-06CC Summary of contents
Page 1
... Diodes connected in series Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION Epitaxial Diode ...
Page 2
ISOPLUS220 Outline NOTE: 1. Bottom heatsink (Pin 4) is electrically isolated from Pin Pin connections Cathode 2 - Anode/Cathode 3 - Anode DSEE 6-06CC ...