STTH6003CW STMicroelectronics, STTH6003CW Datasheet - Page 3

• Manufacturer Part Number: STTH6003CW
• Description: DIODE 300V 2X30A TO-247
• Manufacturer: STMicroelectronics

Specifications of STTH6003CW

• Voltage - Forward (vf) (max) @ If: 1.25V @ 30A
• Current - Reverse Leakage @ Vr: 60µA @ 300V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 55ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Rectifier Type: Switching Diode
• Configuration: Dual Common Cathode
• Peak Rep Rev Volt: 300V
• Avg. Forward Curr (max): 60A
• Rev Curr: 60uA
• Peak Non-repetitive Surge Current (max): 300A
• Forward Voltage: 1.25@30AV
• Operating Temp Range: -40C to 150C
• Package Type: TO-247
• Rev Recov Time: 55ns
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Product: Ultra Fast Recovery Rectifier
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 30 A
• Recovery Time: 55 ns
• Forward Continuous Current: 60 A
• Max Surge Current: 300 A
• Reverse Current Ir: 60 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2720-5

Fig. 1: Conduction losses versus average current
(per diode).
Fig. 3a: Relative variation of thermal impedance
junction to case versus pulse duration (ISOTOP).
Fig. 4:
dI
40
35
30
25
20
15
10
1.0
0.8
0.6
0.4
0.2
0.0
22
20
18
16
14
12
10
5
0
8
6
4
2
0
1E-3
F
0
0
/dt (90% confidence, per diode).
IRM(A)
P1(W)
Zth(j-c)/Rth(j-c)
VR=200V
Tj=125°C
= 0.5
= 0.2
Single pulse
= 0.1
50 100 150 200 250 300 350 400 450 500
5
Peak reverse recovery current versus
1E-2
= 0.05
10
= 0.1
15
dIF/dt(A/µs)
IF(av) (A)
tp(s)
= 0.2
1E-1
IF=IF(av)
20
25
= 0.5
IF=2*IF(av)
1E+0
IF=0.5*IF(av)
30
=tp/T
=tp/T
T
= 1
35
T
tp
1E+1
tp
40
Fig. 2: Forward voltage drop versus forward
current (maximum values per diode)
100
Fig. 3b: Relative variation of thermal impedance
junction to case versus pulse duration (TO-247).
Fig. 5: Reverse recovery time versus dI
confidence, per diode).
180
160
140
120
100
1.0
0.8
0.6
0.4
0.2
0.0
10
80
60
40
20
1E-4
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Zth(j-c)/Rth(j-c)
0
trr(ns)
IFM(A)
= 0.5
= 0.2
= 0.1
Single pulse
50 100 150 200 250 300 350 400 450 500
IF=2*IF(av)
1E-3
Typical values
IF=0.5*IF(av)
Tj=125°C
dIF/dt(A/µs)
Maximum values
VFM(V)
Tj=25°C
1E-2
tp(s)
IF=IF(av)
STTH6003TV/CW
Maximum values
Tj=125°C
1E-1
=tp/T
VR=200V
Tj=125°C
F
/dt (90%
T
tp
1E+0
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