BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAS16
BAS16W
Type
BAS16
BAS16-02L*
BAS16-02V
BAS16-02W
BAS16-03W
BAS16-07L4*
BAS16S
BAS16U
BAS16W
* Preliminary Data
1
Pb-containing package may be available upon special request
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
TSLP-4-4
SOT363
SC74
SOT323
1)
BAS16S
BAS16U
1
Configuration
single
single, leadless
single
single
single
parallel pair, leadless
parallel triple
parallel triple
single
BAS16-07L4
Marking
A6s
A6
6
A6
white B
6A
A6s
A6s
A6s
2009-09-28
BAS16...
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