BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 3
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
Forward voltage
I
I
I
I
I
Forward recovery voltage
I
1
Thermal Resistance
Parameter
Junction - soldering point
BAS16, BAS16S
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16U
BAS16W
(BR)
F
F
F
F
F
F
For calculation of R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 10 mA, t
= 75 V
= 25 V, T
= 75 V, T
= 100 µA
A
A
P
= 150 °C
= 150 °C
= 20 ns
thJA
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
3
Symbol
V
I
V
V
Symbol
R
R
(BR)
F
fr
thJS
min.
85
-
-
-
-
-
-
-
-
-
Values
≤ 120
≤ 135
≤ 150
≤ 125
Value
≤ 260
≤ 80
typ.
-
-
-
-
-
-
-
-
-
-
max.
1000
1200
1250
1.75
715
855
30
50
1
-
2009-09-28
BAS16...
Unit
V
µA
mV
V
Unit
K/W