BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 2
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Maximum Ratings at T
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
BAS16
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current
t = 1 µs, BAS16/ S/ U/ W/ -03W
t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4
t = 1 s
Total power dissipation
BAS16, T
BAS16-02L, -07L4, T
BAS16-02V, -02W, T
BAS16-03W, T
BAS16S, T
BAS16U, T
BAS16W, T
Junction temperature
Storage temperature
S
S
S
≤ 54 °C
S
≤ 85 °C
≤ 113 °C
≤ 119 °C
S
≤ 116 °C
S
S
≤ 120 °C
≤ 130 °C
A
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
P
T
T
F
FSM
j
stg
R
RM
tot
-65 ...150
Value
250
200
200
250
200
200
250
370
250
250
250
250
250
250
150
4.5
2.5
0.5
80
85
2009-09-28
BAS16...
Unit
V
mA
A
mW
°C