BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 19
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
1
2
Cathode
marking
Top view
1) Dimension applies to plated terminal
Cathode
marking
Copper
0.6
Package TSLP-2-1
Solder mask
0.05 MAX.
0.76
4
0.4
+0.1
19
Stencil apertures
0.5
0.45
±0.035
0.5
BAS16-02L
Type code
Cathode marking
Laser marking
1)
Bottom view
2
1
0.6
±0.05
2009-09-28
BAS16...