BYV74W-400,127 NXP Semiconductors, BYV74W-400,127 Datasheet - Page 3

DIODE RECT 400V 30A SOT429

BYV74W-400,127

Manufacturer Part Number
BYV74W-400,127
Description
DIODE RECT 400V 30A SOT429
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV74W-400,127

Voltage - Forward (vf) (max) @ If
1.36V @ 30A
Current - Reverse Leakage @ Vr
50µA @ 400V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
60ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934047100127
BYV74W-400
BYV74W-400
Philips Semiconductors
April 1998
Dual rectifier diodes
ultrafast
Fig.5. Maximum t
Fig.7. Typical and maximum forward characteristic
1000
Fig.6. Maximum I
100
10
1
0.01
50
40
30
20
10
0.1
0
1
10
0
1
trr / ns
IF / A
Tj = 25 C
Tj = 150 C
Tj = 25 C
Tj = 100 C
1
Irrm / A
I
F
0.5
= f(V
rr
at T
IF= 20 A
rrm
F
dIF/dt (A/us)
); parameter T
-dIF/dt (A/us)
at T
j
diode
= 25˚C and 100˚C; per diode
BYV74
typ
VF / V
10
1
10
j
= 25˚C and 100˚C; per
IF=1A
Tj = 25 C
Tj = 100 C
1A
IF=20 A
max
1.5
j
100
2
100
3
Fig.9. Transient thermal impedance per diode
0.001
1000
Fig.8. Maximum Q
100
0.01
10
1
0.1
10
1
1.0
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
100us
Z
pulse width, tp (s)
th j-mb
-dIF/dt (A/us)
1ms
s
at T
= f(t
P
10
D
IF = 20 A
2 A
10ms 100ms
j
p
= 25˚C; per diode
)
BYV74W series
t
p
Product specification
T
D =
BYV42E
T
t
p
t
1s
Rev 1.000
100
10s

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