BYV72EW-200,127 NXP Semiconductors, BYV72EW-200,127 Datasheet - Page 2

• Manufacturer Part Number: BYV72EW-200,127
• Description: DIODE FAST DUAL 30A 200V TO247
• Manufacturer: NXP Semiconductors

Specifications of BYV72EW-200,127

• Voltage - Forward (vf) (max) @ If: 1.2V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 28ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1668-5; 934047080127; BYV72EW-200

Philips Semiconductors
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
October 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
R
rr1
rr2
F
fr
th j-mb
th j-a
s
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
j
= 25 ˚C unless otherwise stated
CONDITIONS
per diode
both diodes conducting
in free air
CONDITIONS
I
I
I
V
V
I
I
-dI
I
I
F
F
F
F
F
F
F
R
R
= 15 A; T
= 15 A
= 30 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
F
= V
= V
/dt = 100 A/ s
RWM
RWM
; T
R
R
F
2
j
/dt = 10 A/ s
= 150˚C
j
R
= 100 ˚C
30 V; -dI
30 V;
= 1 A; I
rec
F
/dt = 20 A/ s
= 0.25 A
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
BYV72EW series
TYP.
TYP.
0.83
0.95
1.00
0.5
45
10
20
13
6
1
-
-
Product specification
MAX.
MAX.
0.90
1.05
1.20
100
2.4
1.4
15
28
22
1
-
-
Rev 1.200
UNIT
UNIT
K/W
K/W
K/W
mA
nC
ns
ns
V
V
V
V
A