1PS226,115 NXP Semiconductors, 1PS226,115 Datasheet

DIODE 80V 125MA HI-SPEED SC59

1PS226,115

Manufacturer Part Number
1PS226,115
Description
DIODE 80V 125MA HI-SPEED SC59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1PS226,115

Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1PS226 T/R
1PS226 T/R
934028450115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1PS226,115
Manufacturer:
NuvoTon
Quantity:
1
Product data sheet
Supersedes data of April 1996
dbook, halfpage
DATA SHEET
1PS226
High-speed double diode
DISCRETE SEMICONDUCTORS
M3D114
1996 Sep 03

Related parts for 1PS226,115

1PS226,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage 1PS226 High-speed double diode Product data sheet Supersedes data of April 1996 DISCRETE SEMICONDUCTORS M3D114 1996 Sep 03 ...

Page 2

... NXP Semiconductors High-speed double diode FEATURES • Small plastic SMD package • High switching speed: max • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. ...

Page 3

... NXP Semiconductors High-speed double diode ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp ...

Page 4

... NXP Semiconductors High-speed double diode GRAPHICAL DATA 300 I F (mA) 200 single diode loaded double diode loaded 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, halfpage I R (μA) 10 (1) ( 100 ( ...

Page 5

... NXP Semiconductors High-speed double diode handbook, full pagewidth D.U. Ω ( mA. R Fig.6 Reverse recovery voltage test circuit and waveforms. I Ω 450 Ω D.U.T. Fig.7 Forward recovery voltage test circuit and waveforms. 1996 Sep 10% SAMPLING OSCILLOSCOPE Ω MGA881 Ω I OSCILLOSCOPE Ω 10% ...

Page 6

... NXP Semiconductors High-speed double diode PACKAGE OUTLINE 0.2 M Dimensions in mm. 1996 Sep 03 1.65 1.25 0.50 A 0.35 3 3.0 2 2.1 1.7 3.1 2.7 Fig.8 SC59. 6 Product data sheet 1PS226 1.3 1.0 0.100 0.013 A 1.7 1.3 0.6 0.2 0.26 0.10 msa313 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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