STTA2512P STMicroelectronics, STTA2512P Datasheet - Page 2

• Manufacturer Part Number: STTA2512P
• Description: DIODE TURBO 25A 1200V SOD-93
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA2512P

• Voltage - Forward (vf) (max) @ If: 2.1V @ 25A
• Current - Reverse Leakage @ Vr: 150µA @ 480V
• Current - Average Rectified (io) (per Diode): 25A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 110ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Through Hole, Radial
• Package / Case: SOD-93-2
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 2.1 V
• Recovery Time: 110 ns
• Forward Continuous Current: 50 A
• Max Surge Current: 210 A
• Reverse Current Ir: 150 uA
• Power Dissipation: 62.5 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STTA2512P / STTA5012TV1/2
THERMAL AND POWER DATA (per diode)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Test pulses :
To evaluate the maximum conduction losses use the following equation :
P = V
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
TURN-ON SWITCHING
2/9
Symbol
Symbol
Symbol
Symbol
S factor
R
R
P
I
V
V
R
I
V
th(j-c)
R
P
RM
th(c)
max
t
to
t
F
rr
Fp
fr
to
1
d
**
*
x I
F(AV)
* tp = 380 s, < 2%
** tp = 5 ms , < 2%
Forward voltage drop
Reverse leakage current
Threshold voltage
Dynamic resistance
Junction to case thermal
resistance
Coupling thermal resistance
Conduction power dissipation
I
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Reverse recovery
time
Maximum reverse
recovery current
Softness factor
Forward recovery time
Peak forward voltage
F(AV)
+ Rd x I
Parameter
= 25A
Parameter
F
Parameter
2
(RMS)
=0.5
Parameter
Tj = 25°C
I
I
Tj = 125°C VR = 600V
dI
dI
Tj = 125°C V
dI
F
F
F
F
F
= 0.5 A
= 1 A dI
/dt = -200 A/ s
/dt = -500 A/ s
/dt = -500 A/ s
I
V
V
Ip < 3.I
F
R
RRM
=25A
Test conditions
Tj = 25°C
I
measured at 1.1
Tj = 25°C
I
I
=0.8 x
F
F
F
F
=25 A, dI
=25A, dI
=40A, dI
Test conditions
/dt =-50A/ s V
I
ISOTOP
ISOTOP
ISOTOP
SOD93
ISOTOP
SOD93
ISOTOP
SOD93
F(AV)
R
R
Test conditions
= 600V
= 1A
F
F
F
/dt = 200 A/ s
/dt = 500 A/ s
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
/dt = 200 A/ s
Irr = 0.25A
I
F
I
R
F
=25A
V
=30V
=25A
Per diode
Total
Coupling
Tc= 70°C
Tc= 82°C
Tc= 62°C
Tc= 75°C
F
Conditions
max
Min
Min
Min
Typ
Typ
Typ
2.0
1.2
1.3
60
45
35
Value
0.75
62.5
1.4
1.2
0.1
57
Max
1.52
Max
Max
150
110
900
2.1
1.9
15
35
30
8
°C/W
°C/W
Unit
Unit
Unit
Unit
m
mA
ns
ns
W
W
V
V
V
A
V
/
A