1N4148,113 NXP Semiconductors, 1N4148,113 Datasheet - Page 5

DIODE SW HS 100V 200MA DO-35

1N4148,113

Manufacturer Part Number
1N4148,113
Description
DIODE SW HS 100V 200MA DO-35
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1N4148,113

Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
25nA @ 20V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.025 uA
Operating Temperature Range
+ 200 C
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Not applicable / Not applicable
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Not applicable / Not applicable
Other names
1N4148 T/R
568-1360-2
933083990113
NXP Semiconductors
2004 Aug 10
High-speed diodes
(1) V
(2) V
Fig.5
(µA)
I
R
10 −
10 −
10
10
10
1
R
R
3
2
1
2
0
= 75 V; typical values.
= 20 V; typical values.
Reverse current as a function of junction
temperature.
100
(1)
T
j
(°C)
(2)
mgd290
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.2
1.0
0.8
0.6
0.4
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
1N4148; 1N4448
10
V R (V)
Product data sheet
MGD004
20

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