PMBD6050,215 NXP Semiconductors, PMBD6050,215 Datasheet - Page 6

• Manufacturer Part Number: PMBD6050,215
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD6050,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 70V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 4 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4877-2; 933859220215; PMBD6050 T/R; PMBD6050 T/R; PMBD6050,215

NXP Semiconductors
2004 Jan 14
handbook, full pagewidth
handbook, halfpage
High-speed diode
(1) V
(2) V
(3) V
Fig.5
(1) I
V = V
(µA)
10
10
I R
10
R
R
R
R
10
R = 50
= 1 mA.
1
S
2
1
= 50 V; maximum values.
= 50 V; typical values.
= 30 V; typical values.
2
R
0
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
(1)
(2)
100
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
D.U.T.
(3)
T j (
o
C)
OSCILLOSCOPE
SAMPLING
R = 50
MGA881
MBG379
i
200
Ω
V R
6
10%
t r
handbook, halfpage
f = 1 MHz; T
Fig.6
90%
(pF)
input signal
C d
0.8
0.6
0.4
0.2
0
t p
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
4
t
8
I F
output signal
PMBD6050
Product data sheet
12
V R (V)
t rr
MBG446
16
(1)
t