BAT54W,115 NXP Semiconductors, BAT54W,115 Datasheet - Page 3

• Manufacturer Part Number: BAT54W,115
• Description: DIODE SCHOTTKY 30V 200MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BAT54W,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Single
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 0.6A
• Forward Voltage: 0.8@0.1AV
• Operating Temp Range: -65C to 125C
• Package Type: SC-70
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3416-2; 934028880115; BAT54W T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
1996 Mar 19
Per diode
V
I
I
I
P
T
T
T
Per diode
V
I
t
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
rr
stg
j
amb
R
tot
F
d
th j-a
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
PARAMETER
t
t
T
see Fig.6
V
when switched from I
I
I
f = 1 MHz; V
p
p
R
R
amb
R
I
I
I
I
I
= 10 mA; R
= 1 mA: see Fig.9
F
F
F
F
F
= 25 V; note 1; see Fig.7
1 s;
10 ms
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
note 1
3
25 C
CONDITIONS
CONDITIONS
0.5
R
L
= 1 V; see Fig.8
CONDITIONS
= 100 ; measured at
F
= 10 mA to
240
320
400
500
800
2
5
10
BAT54W series
MIN.
65
65
VALUE
MAX.
625
Product specification
30
200
300
600
200
+150
125
+125
MAX.
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
C
UNIT