RF071M2STR Rohm Semiconductor, RF071M2STR Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RF071M2STR
Manufacturer Part Number
RF071M2STR
Description
DIODE 200V 700MA SOD123
Manufacturer
Rohm Semiconductor
Specifications of RF071M2STR
Voltage - Forward (vf) (max) @ If
850mV @ 700mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
700mA
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Fast Recovery 200v 7a
Diode Type
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
700mA
Forward Voltage Vf Max
850mV
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm Max
15A
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.85 V
Recovery Time
25 ns
Forward Continuous Current
0.7 A
Max Surge Current
15 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
Rohm Semiconductor
Diodes
Fast recovery Diode
RF071M2S
General rectification
1) Small power mold type. (PMDU)
2) Ultra low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planar
Reverse voltage (repetitive)
Reverse voltage (DC)
Forward current (DC)
Average rectified forward current (*1)
Forward current surge peak（60Hz・1cyc）
Junction temperature
Storage temperature
(*1)Mounting on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Reverse recovery time
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
F
Parameter
Symbol
trr
V
I
R
F
Dimensions (Unit : mm)
JEDEC :SOD-123
ROHM : PMDU
Taping specifications (Unit : mm)
Manufacture Date
Symbol
1.6±0.1
0.9±0.1
Min.
Tstg
V
I
V
FSM
-
-
-
Io
Tj
I
RM
F
1.81±0.1
R
4.0±0.1 2.0±0.05
Typ.
0.79
0.01
12
4.0±0.1
-55 to +150
Max.
0.85
10
25
0.8±0.1
Limits
0.1±0.1
0.05
200
200
150
φ1.55±0.05
0.7
15
1
φ1.0±0.1
Unit
µA
ns
V
Land size figure (Unit : mm)
Structure
PMDU
I
V
I
F
F
=0.5A,I
R
=0.7A
Unit
=200V
℃
℃
V
V
A
A
A
0.25±0.05
Conditions
R
1.2
Rev.E
1.5MAX
=1A,Irr=0.25*I
RF071M2S
R
1/3
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RF071M2STR Summary of contents
Diodes Fast recovery Diode RF071M2S Applications General rectification Features 1) Small power mold type. (PMDU) 2) Ultra low Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) ...
Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=150℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 820 Ta=25℃ IF=0.7A 810 n=30pcs 800 790 AVE:795.7mV 780 770 VF DISPERSION ...
Diodes D=t/T VR=100V 2 T Tj=150℃ D=1/2 Sin(θ＝180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta D=t/T VR=100V VR=100V 2 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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