RF071M2STR Rohm Semiconductor, RF071M2STR Datasheet - Page 3

• Manufacturer Part Number: RF071M2STR
• Description: DIODE 200V 700MA SOD123
• Manufacturer: Rohm Semiconductor

Specifications of RF071M2STR

• Voltage - Forward (vf) (max) @ If: 850mV @ 700mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 700mA
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Fast Recovery 200v 7a: Diode Type
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 700mA
• Forward Voltage Vf Max: 850mV
• Reverse Recovery Time Trr Max: 25ns
• Forward Surge Current Ifsm Max: 15A
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.85 V
• Recovery Time: 25 ns
• Forward Continuous Current: 0.7 A
• Max Surge Current: 15 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
3
2
1
0
0
D=1/2
DC
Sin(θ＝180)
AMBIENT TEMPERATURE:Ta(℃)
25
Derating Curveﾞ(Io-Ta)
50
75
0A
0V
100
T
t
T
125
Tj=150℃
D=t/T
VR=100V
Io
150
VR
Io
3
2
1
0
0
Sin(θ＝180)
D=1/2
CASE TEMPARATURE:Tc(℃)
DC
25
Derating Curveﾞ(Io-Tc)
50
75
0
0
0A
0V
100
t
t
T
T
125
VR=100V
Tj=150℃
Tj=150℃
D=t/T
VR=100V
Io
VR
Io
150
30
25
20
15
10
5
0
ESD DISPERSION MAP
AVE:13.6kV
C=200pF
R=0Ω
Rev.E
RF071M2S
No break at 30kV
C=100pF
R=1.5kΩ
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