1N5817 STMicroelectronics, 1N5817 Datasheet
1N5817
Specifications of 1N5817
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497-4547-3
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1N5817 Summary of contents
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... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed 150°C 0.45 V Parameter T = 125° 0 Sinusoidal tp = 1µ 25°C 1N581x DO41 Value 1N5817 1N5818 1N5819 1200 1200 900 - 150 150 10000 Unit °C °C V/µs 1/5 ...
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... Parameter Lead length = 10 mm Lead length = 10 mm Tests Conditions Tj = 25° RRM Tj = 100° for 1N5817 / 1N5818 for 1N5819 Fig. 2: Average forward power dissipation versus average forward current (1N5819). PF(av)(W) 0.7 = 0.5 0.6 0 0.4 0.3 0.2 T 0.1 =tp/T tp 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig ...
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... Fig. 3: Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5817/1N5818). IM( t(s) =0.5 0 1E-3 1E-2 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout) ...
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... Fig. 8-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818). IR(mA) 1E+1 Tj=125°C 1N5817 1E+0 Tj=100°C 1E-1 1E-2 Tj=25°C VR(V) 1E Fig. 9-1: Forward voltage drop versus forward current (typical values) (1N5817/1N5818). IFM(A) 10.00 1.00 Tj=100°C Tj=125° ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...